Paper
12 May 2005 Lithographic performance of a dual-stage 0.93NA ArF step and scan system
Rian Rubingh, Marco Moers, Manfred Suddendorf, Peter Vanoppen, Aernout Kisteman, Michael Thier, Vladan Blahnik, Eckhard Piper
Author Affiliations +
Abstract
This paper presents lithographic performance results obtained from the newest member of ASML's TWINSCAN platform-based step & scan systems, the TWINSCAN XT:1400. The system has been designed to meet the semiconductor industry's aggressive requirements on CD control, overlay and productivity at and below the 65 nm node. This dual stage 193 nm lithographic system combines the worlds highest NA, with excellent overlay and CD control at high throughput on both 200 and 300 mm wafers and is intended for use in volume production environments. Advances in stage technology have enabled further extension of stage scan speeds and an associated increase in tool productivity. However, maximizing the number of yielding die per day also requires stringent overlay and Critical Dimension (CD) control. Tight CD control at improved resolution is supported by the Starlith 1400 projection lens and the extended sigma capabilities of the new AERIAL-E illumination system. Focus control is improved in line with the stringent requirements posed by low-k1 imaging applications, taking full advantage of the unique dual-stage TWINSCAN system architecture.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rian Rubingh, Marco Moers, Manfred Suddendorf, Peter Vanoppen, Aernout Kisteman, Michael Thier, Vladan Blahnik, and Eckhard Piper "Lithographic performance of a dual-stage 0.93NA ArF step and scan system", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.599805
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CITATIONS
Cited by 7 scholarly publications and 4 patents.
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KEYWORDS
Electroluminescence

Semiconducting wafers

Critical dimension metrology

Silver

Photomasks

Lithography

Control systems

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