Paper
5 May 2005 Correlation analysis of CD-variation and circuit performance under multiple sources of variability
Author Affiliations +
Abstract
Variability of digital integrated circuits is becoming an increasing concern with shrinking transistor geometries due to process scaling. As a result, the electrical properties of MOS devices can exhibit significant deviation from their design specifications, causing substantial variation in the performance of high-end designs. Lithography perturbations can affect a number of layout geometries, although the most critical parameter for circuit performance is the transistor channel length or Critical Dimension (CD). Key sources of CD variation include dose, focus, lens aberration and mask errors. In this paper, we compare the impact of above sources of CD variation on circuit performance. We present a new design analysis methodology which models the CD variation from each individual source in static timing analysis for different circuit blocks. Using this analysis capability, we study the impact of lithographic perturbations on block-level circuit performance for two adders. Furthermore, we study the correlation between the CD variability resulting from a lithographic perturbation source, and the resulting circuit performance variability. Through this analysis we determine the suitability of CD variability as an accurate predictor for circuit performance.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amir Borna, Chris Progler, and David Blaauw "Correlation analysis of CD-variation and circuit performance under multiple sources of variability", Proc. SPIE 5756, Design and Process Integration for Microelectronic Manufacturing III, (5 May 2005); https://doi.org/10.1117/12.604606
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Critical dimension metrology

Transistors

Lithography

Optical proximity correction

Device simulation

Silicon

Image processing

RELATED CONTENT

Adaptive OPC with a conformal target layout
Proceedings of SPIE (July 30 2002)
Evaluation of OPC efficacy
Proceedings of SPIE (June 07 1996)
Device analysis a way to reduce patterning cost at...
Proceedings of SPIE (December 06 2004)

Back to Top