Paper
28 June 2005 Requirements for mask technology from the view point of SOC and FLASH memory trends (Invited Paper)
Akira Imai, Noboyuki Yoshioka, Tetsuro Hanawa, Koichiro Narimatsu, Kunihiro Hosono, Kazuyuki Suko
Author Affiliations +
Abstract
Semiconductor devices are making important role in our life. Many semiconductor chips will be used to every thing, and we will receive the various services anywhere anytime through a digital network. There are so many applications using semiconductor products that support such a ubiquitous era, and it is expected that mobile, automobile and PC/AV applications will have the great growth from now on. In this paper, we describe the lithography technology trend and requirements for mask technology from the view point of SOC and FLASH memory trend. From the device development trend, it is expected that FLASH memory become driving force of lithography technology. To realize hp45nm node and beyond, the installation of hyper-NA ArF-immersion tools with low-k1 technique is the key issue. With this, DFM (Design For Manufacturability) is the key technology and a continuous approach of systematic DFM technique is important in order to reduce chip cost. Also, Mask DFM is needed to realize cost-effective low-k1 process and it drives reasonable mask cost and TAT. In order to reduce mask cost in device development and small volume production, we expect greatly that maskless lithography (ML2) become a leading tool in lithography.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Imai, Noboyuki Yoshioka, Tetsuro Hanawa, Koichiro Narimatsu, Kunihiro Hosono, and Kazuyuki Suko "Requirements for mask technology from the view point of SOC and FLASH memory trends (Invited Paper)", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617033
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KEYWORDS
Photomasks

Design for manufacturing

Lithography

Semiconductors

System on a chip

Maskless lithography

Optical proximity correction

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