Sub 100-nm defect classification and analysis on extreme ultraviolet (EUV) mask blanks and substrates

Emily Y. Shu

doi:10.1117/12.617472

28 June 2005 Sub 100-nm defect classification and analysis on extreme ultraviolet (EUV) mask blanks and substrates

Emily Y. Shu

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617472
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

The most critical challenges in EUVL include the manufacturing of defect-free EUVL substrates, blanks, and masks. Developing capability in the areas of sub-100nm defect metrology, characterization, and analysis provides the key path for defect root-cause analysis in the defects elimination roadmap. We have demonstrated successful application of integrated surface analytical techniques, including AES (Auger Electron Spectroscopy), EDX (Electron Dispersion X-ray Spectrometry), SEM, and AFM to review, analyze, and characterize defects on EUVL multilayer blanks and substrates, following the optical defect inspection process by the Lasertec M1350, which does defect scanning, mapping, image review, and fiducial marking. Small defects, 40nm wide and 10nm tall, have been analyzed in morphology as well as in composition. In order to overcome the electron beam charging problem on the substrate materials during analysis, we applied marking and metal film coating on the LTEM substrates and acquired composition data. Defect metrology data serve as finger prints of the EUV blank fabrication process. We have discovered that the majority of the multilayer defects today are embedded bumps, pinholes, and organic materials that originated from the LTEM substrates. Composition data of the defects also suggested that process chemicals and human handling of process are the culprit of these defects. Therefore defect reduction efforts should be focused on the processes or procedures which take place from the glass finishing process to the very first layers of silicon molybdenum deposition.

Citation Download Citation

Emily Y. Shu "Sub 100-nm defect classification and analysis on extreme ultraviolet (EUV) mask blanks and substrates", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617472

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KEYWORDS

Extreme ultraviolet

Scanning electron microscopy

Multilayers

Silicon

Extreme ultraviolet lithography

Photomasks

Atomic force microscopy

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