An ICP etch model based on time multiplexed deep etching

Jian Zhang; Qing-An Huang; Wei-Hua Li

doi:10.1117/12.667865

7 February 2006 An ICP etch model based on time multiplexed deep etching

Jian Zhang, Qing-An Huang, Wei-Hua Li

Proceedings Volume 6032, ICO20: MEMS, MOEMS, and NEMS; 60320G (2006) https://doi.org/10.1117/12.667865
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

A novel ICP etch model based on time multiplexed deep etching is reported in this paper. 2-D and 3-D zonal simulations of surface evolvement can be performed using this model. The simulation is advanced with the simplex algorithm for surface evolvement and consequent higher efficiency than other reported hybrid algorithms. And the etching of different material types can also be simulated using this model. Simulations with different aspect ratios are performed in this paper and the results are quite perfect without aforehand experimental fitting.

Citation Download Citation

Jian Zhang, Qing-An Huang, and Wei-Hua Li "An ICP etch model based on time multiplexed deep etching", Proc. SPIE 6032, ICO20: MEMS, MOEMS, and NEMS, 60320G (7 February 2006); https://doi.org/10.1117/12.667865

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