Application of optical CD metrology based on both spectroscopic ellipsometry and scatterometry for Si-recess monitor

Peter C. Y. Huang; Ryan C. J. Chen; Fang-Cheng Chen; Baw-Ching Perng; Jyu-Horng Shieh; S. M. Jang; M. S. Liang

doi:10.1117/12.656226

24 March 2006 Application of optical CD metrology based on both spectroscopic ellipsometry and scatterometry for Si-recess monitor

Peter C. Y. Huang, Ryan C. J. Chen, Fang-Cheng Chen, Baw-Ching Perng, Jyu-Horng Shieh, S. M. Jang, M. S. Liang

Author Affiliations +

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61520H (2006) https://doi.org/10.1117/12.656226
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Scatterometry is gaining popularity in recent years as it shows itself as a worthy contender among existing metrology systems. Scatterometry provides fast, accurate and precise profile information, which is valuable for in-line process control in production environment. Scatterometry applications widely adopted in IC fabs include poly gate ADI and AEI, and shallow trench isolation depth measurements. Recently, the mobility enhancement by compressive strain at source/drain is reported which improves greatly PMOS Idsat. In this work, we extend the application domain of scatterometry technology to two-dimensional recessed Si profile used in strained source and drain (SSD) structures. Complexity of SSD structures measurement by scatterometry requires the use of many parameters in modeling, which hinders a stable library setup. Our approach in circumventing this issue is to identify the most sensitive parameters first and then further reduce the number of variables through an effective medium approximation (EMA). This paper will discuss the preparation, experiments, and results of the scatterometry measurements. The extracted data have been compared with transmission electron microscopy results. Good correlation in depth and profile are observed. In addition, we have performed repeatability test and fault detection checks and the trend chart indicates that our methodology is very robust for in-line process monitor.

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Peter C. Y. Huang, Ryan C. J. Chen, Fang-Cheng Chen, Baw-Ching Perng, Jyu-Horng Shieh, S. M. Jang, and M. S. Liang "Application of optical CD metrology based on both spectroscopic ellipsometry and scatterometry for Si-recess monitor", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61520H (24 March 2006); https://doi.org/10.1117/12.656226

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KEYWORDS

Scatterometry

Silicon

Transmission electron microscopy

Critical dimension metrology

Inspection

Metrology

Scatter measurement

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