Paper
24 March 2006 High-resistance W-plug monitoring with an advance e-beam inspection system
Hermes Liu, J. H. Yeh, Chan Lon Yang, S. C. Lei, J. Y. Kao, Y. D. Yang, Mingsheng Tsai, S. F. Tzou, Wei-Yih Wu, Hong-Chi Wu, Hong Xiao, Jack Jau
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Abstract
Dark voltage contrast (DVC) defects are detected on normally bright tungsten plugs (W-plugs) during the in-line e-beam inspection step. Cross-sectional scanning electron microscope (SEM) and transmission electron microscope (TEM) in a failure analysis (FA) lab verified that DVC defects with different gray level values (GLV) are caused by different resistances of the W-plugs. We found that DVC defects with lower GLV (GLV1) are W-plugs that are open or almost open. DVC defects with higher GLV GLV2 are caused by partially open W-plugs and in-plug voids. Wafer acceptance test (WAT) results correlated well with e-beam inspection results.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hermes Liu, J. H. Yeh, Chan Lon Yang, S. C. Lei, J. Y. Kao, Y. D. Yang, Mingsheng Tsai, S. F. Tzou, Wei-Yih Wu, Hong-Chi Wu, Hong Xiao, and Jack Jau "High-resistance W-plug monitoring with an advance e-beam inspection system", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61524A (24 March 2006); https://doi.org/10.1117/12.656217
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KEYWORDS
Inspection

Scanning electron microscopy

Semiconducting wafers

Transmission electron microscopy

Defect detection

Resistance

Electron microscopes

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