Intensive 2D SEM model calibration for 45nm and beyond

George E. Bailey; Thuy Do; Yuri Granik; Ir Kusnadi; Andrew Estroff

doi:10.1117/12.655076

20 March 2006 Intensive 2D SEM model calibration for 45nm and beyond

George E. Bailey, Thuy Do, Yuri Granik, Ir Kusnadi, Andrew Estroff

Proceedings Volume 6154, Optical Microlithography XIX; 61542W (2006) https://doi.org/10.1117/12.655076
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Conventional site-base model calibration approaches have worked fine from the 180nm down to the 65nm technology nodes, but with the first 45nm technology nodes rapidly approaching, site-based model calibration techniques may not capture the details contained in these 2D-intensive designs. Due to the compaction of designs, we have slowly progressed from 1D-intensive gates, which were site-based friendly, to very complex and sometimes ornate 2D-gate regions. To compound the problem, these 2D-intensive gate regions are difficult to measure resulting in metrology-induced error when attempting to add these regions to the model calibration data. To achieve the sub-nanometer model accuracy required at this node, a model calibration technique must be able to capture the curvature induced by the process and the design in these gate regions. A new approach in model calibration had been developed in which images from a scanning electron microscope (SEM) are used together with the conventional site-base to calibrate models instead of the traditional single critical dimension (CD) approach. The advantage with the SEM-image model calibration technique is that every pixel in the SEM image contributes as CD information improving model robustness. Now the ornate gate regions could be utilized as calibration features allowing the acquisition of fine curvature in the design. This paper documents the issues of the site-base model calibration technique at the 45nm technology node and beyond. It also demonstrates the improvement in model accuracy for critical gate regions over the traditional modeling technique, and it shows the best know methods to achieve the utmost accuracy. Lastly, this paper shows how SEM-based modeling quantifies modeling error in these complex 2D regions.

Citation Download Citation

George E. Bailey, Thuy Do, Yuri Granik, Ir Kusnadi, and Andrew Estroff "Intensive 2D SEM model calibration for 45nm and beyond", Proc. SPIE 6154, Optical Microlithography XIX, 61542W (20 March 2006); https://doi.org/10.1117/12.655076

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available