Lithography budget analysis at the process module level

Colin J. Brodsky; William Chu

doi:10.1117/12.659458

21 March 2006 Lithography budget analysis at the process module level

Colin J. Brodsky, William Chu

Proceedings Volume 6154, Optical Microlithography XIX; 61543Y (2006) https://doi.org/10.1117/12.659458
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

A simple experimentally characterized lumped-parameter budget model is developed with the goal of quantifying the most significant components of critical dimension (CD) variation through an integrated process module. Tracked components include mask fabrication budgets, mask error factor, scanner field variation, optical proximity correction error, CD errors over chip topography, wafer-to-wafer and lot-to-lot variation. The components of variation are quantified for lithography and etch where appropriate and are fed into a simple interaction model to construct an overall patterning module CD budget. Normalized experimental results for this budget analysis are presented for 65 nm technology node contact patterning processes.

Citation Download Citation

Colin J. Brodsky and William Chu "Lithography budget analysis at the process module level", Proc. SPIE 6154, Optical Microlithography XIX, 61543Y (21 March 2006); https://doi.org/10.1117/12.659458

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