Recent Development In Amorphous Silicon Image Sensor

Takashi Ozawa; Mutsuo Takenouchi

doi:10.1117/12.961083

12 March 1986 Recent Development In Amorphous Silicon Image Sensor

Takashi Ozawa, Mutsuo Takenouchi

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961083
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Contact type linear image sensor arouse a great interest as a compact image reading component for a facsimile, an image scanner and many other applications. Among those, amorphous silicon linear image sensors which consist of Cr/a-Si:H/ITO structure have excellent features such as capability of fabrication of large area devices and material stability. B4 size, 200spi image sensors are now on mass production. B4 size, 400spi image sensors have been developed. And very large image sensors with 36 inch length and color sensors also have been developed. a-Si:H TFT driven image sensors which can reduce the cost are under development.

Citation Download Citation

Takashi Ozawa and Mutsuo Takenouchi "Recent Development In Amorphous Silicon Image Sensor", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961083

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