Laser induced defect formation in GaAs near the optical breakdown threshold

S. A. Bakhramov; Sh. D. Payziyev

doi:10.1117/12.677870

14 June 2006 Laser induced defect formation in GaAs near the optical breakdown threshold

S. A. Bakhramov, Sh. D. Payziyev

Proceedings Volume 6259, ICONO 2005: Nonlinear Optical Phenomena; 625908 (2006) https://doi.org/10.1117/12.677870
Event: ICONO 2005, 2005, St. Petersburg, Russian Federation

Abstract

The investigations of nonlinear-optical properties of crystals GaAs by a z-scan method are carried out. The concentration increase (> 10 times) of defects in a crystal GaAs due to picosecond pulse laser (τ = 35 ps, λ= 1.064μm ) irradiation at a number of laser shots >10⁴ near the optical breakdown threshold intensity was observed.

Citation Download Citation

S. A. Bakhramov and Sh. D. Payziyev "Laser induced defect formation in GaAs near the optical breakdown threshold", Proc. SPIE 6259, ICONO 2005: Nonlinear Optical Phenomena, 625908 (14 June 2006); https://doi.org/10.1117/12.677870

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