Paper
29 March 2007 Enhanced reflectance of interface engineered Mo/Si multilayers produced by thermal particle deposition
A. E. Yakshin, R. W. E. van de Kruijs, I. Nedelcu, E. Zoethout, E. Louis, F. Bijkerk, H. Enkisch, S. Müllender
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Abstract
A new deposition technique that builds on the thermal particle characteristics typical for e-beam deposition is described. This technique applies magnetron sputtering in a special scheme where these characteristics of the e-beam deposition method are achieved. The method was used for interface engineering of Mo/Si multilayers, with different barrier layer materials being tested. Composition of the barrier layers formed was studied using XPS. Results are shown on the general example of a Mo/B4C/Si/B4C system. The ultra-thin reflectance enhancement B4C barriers can be deposited with low added stress, resulting in a multilayer stress as low as about -150 MPa. The best interface engineered multilayers reflect 70.5% at 13.3 nm and 70.15% at 13.5 nm. These results were achieved with 50 period multilayers terminated with a standard Si layer.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. E. Yakshin, R. W. E. van de Kruijs, I. Nedelcu, E. Zoethout, E. Louis, F. Bijkerk, H. Enkisch, and S. Müllender "Enhanced reflectance of interface engineered Mo/Si multilayers produced by thermal particle deposition", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170I (29 March 2007); https://doi.org/10.1117/12.711796
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Cited by 25 scholarly publications.
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KEYWORDS
Interfaces

Reflectivity

Multilayers

Particles

Sputter deposition

Silicon

Molybdenum

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