Characterization of the tin-doped droplet laser plasma EUVL sources for HVM

Kazutoshi Takenoshita; Simi A. George; Tobias Schmid; Chiew-Seng Koay; Jose Cunado; Robert Bernath; Christopher Brown; Moza M. Al-Rabban; William T. Silfvast; Martin C. Richardson

doi:10.1117/12.713461

21 March 2007 Characterization of the tin-doped droplet laser plasma EUVL sources for HVM

Kazutoshi Takenoshita, Simi A. George, Tobias Schmid, Chiew-Seng Koay, Jose Cunado, Robert Bernath, Christopher Brown, Moza M. Al-Rabban, William T. Silfvast, Martin C. Richardson

Author Affiliations +

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65173O (2007) https://doi.org/10.1117/12.713461
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Tin-doped droplet target has been integrated with several lasers including high power high repetition rate lasers and demonstrated high conversion efficiencies for all the lasers. This implies the EUV source power is linearly increasing as the laser frequency goes higher. The target exhibit very low out-of-band radiation and debris emission. The drawback of increasing the repetition rate of the target and the laser will be limited. The total amount of tin consumed for a EUVL source system is also small enough to be operated for a long term without large effort for recycling of the target materials. We address and demonstrate in this paper the primary issues associated with long-term high power EUV sources for high volume manufacturing (HVM) using tin-doped droplet target.

Citation Download Citation

Kazutoshi Takenoshita, Simi A. George, Tobias Schmid, Chiew-Seng Koay, Jose Cunado, Robert Bernath, Christopher Brown, Moza M. Al-Rabban, William T. Silfvast, and Martin C. Richardson "Characterization of the tin-doped droplet laser plasma EUVL sources for HVM", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65173O (21 March 2007); https://doi.org/10.1117/12.713461

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