Paper
5 April 2007 Novel method of under-etch defect detection for contact layers based on Si substrate using optic wafer inspection tools
Byoung-Ho Lee, Jin-Seo Choi, Soo-Bok Chin, Do-Hyun Cho, Chang-Lyong Song
Author Affiliations +
Abstract
As the design rules of semiconductor devices have decreased, the detection of critical killer defect has became more important. One of killer defect is under-etch defect caused by insufficient contact etch. Although very low throughput only e-beam inspection tool has used for monitoring tools of under-etch defect because optic wafer inspection does not have enough defect signal to detect that on a contact layer. In this study, a new method is suggested for detection of under-etch defect using optic wafer inspection tools which have high throughput and repeatability.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Byoung-Ho Lee, Jin-Seo Choi, Soo-Bok Chin, Do-Hyun Cho, and Chang-Lyong Song "Novel method of under-etch defect detection for contact layers based on Si substrate using optic wafer inspection tools", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651847 (5 April 2007); https://doi.org/10.1117/12.710746
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KEYWORDS
Wafer inspection

Wafer-level optics

Defect detection

Signal detection

Inspection

Electrons

Semiconducting wafers

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