ArF pellicle degradation mechanism for resolving CD variation

Hyungseok Choi; Yohan Ahn; Jua Ryu; Yangkoo Lee; Bumhyun An; Seokryeol Lee

doi:10.1117/12.718338

5 April 2007 ArF pellicle degradation mechanism for resolving CD variation

Hyungseok Choi, Yohan Ahn, Jua Ryu, Yangkoo Lee, Bumhyun An, Seokryeol Lee

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65184Z (2007) https://doi.org/10.1117/12.718338
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

With the introduction of ArF laser, a binary mask is preferred because a PSM mask is still weak to the crystal defect called as photomask haze although extensive studies trying to resolve the haze impact to a photomask have been performed by various researchers in company and school. However, a new problem was happened after a binary mask introduction that CD variation in an exposure shot is appeared and is gradually increased. And finally, CD variation considerably causes defects in wafer level. It was proven that CD variation is closely related to the change of the reticle transmittance by a lot of researches. In this study, the mechanism of ArF pellicle degradation is focused on because the pellicle degradation affects a reticle transmittance in direct. The components outgassed from a pellicle by the high photon energy of ArF laser, for example carbon or fluorine, are absorbed on the surface of the reticle, so that the transmittance of the reticle is decreased. The phenomena of the pellicle degradation have been studied by the various viewpoints, theoretical background, experiment and results tested in mass production line in this study. Therefore, this study has the important meaning by providing the substantial clues to resolve CD variation problem in a near future.

Citation Download Citation

Hyungseok Choi, Yohan Ahn, Jua Ryu, Yangkoo Lee, Bumhyun An, and Seokryeol Lee "ArF pellicle degradation mechanism for resolving CD variation", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184Z (5 April 2007); https://doi.org/10.1117/12.718338

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available