Paper
11 April 2007 Development of poly-3-hexylthiophene based ISFET sensors for biomedical applications
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Abstract
Ion-sensitive Field-Effect Transistors (ISFETs) have been applied for in vitro and online detection for clinical purposes such as concentration of urea, penicillin-G and potassium ion (K+). They have proven to be highly sensitive, shown less response time, reproducible and smaller than the piecewise assembled conventional biosensors. Materials like p3HT, Tantalum Oxide and PVA-SbQ have show their merit as components of various FETs fabricated on silicon substrate. This paper discusses the feasibility of using them together along with design enhancements such as zigzag inter-digitated electrode. The results hitherto obtained have been analyzed and conclusions are drawn to set future course of experimentation to develop the ISFET for sensor applications.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pratyush Rai, Soyoun Jung, Taeksoo Ji, and Vijay K. Varadan "Development of poly-3-hexylthiophene based ISFET sensors for biomedical applications", Proc. SPIE 6528, Nanosensors, Microsensors, and Biosensors and Systems 2007, 652815 (11 April 2007); https://doi.org/10.1117/12.721764
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KEYWORDS
Field effect transistors

Electrodes

Sensors

Biosensors

Dielectrics

Ions

Oxides

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