Focused electron beam induced deposition of DUV transparent SIO2

Alexandre Perentes; Patrik Hoffmann; Frans Munnik

doi:10.1117/12.736918

3 May 2007 Focused electron beam induced deposition of pure SIO₂

Alexandre Perentes, Patrik Hoffmann, Frans Munnik

Proceedings Volume 6533, 23rd European Mask and Lithography Conference; 65331Q (2007) https://doi.org/10.1117/12.736918
Event: European Mask and Lithography Conference2007, 2007, Grenoble, France

Abstract

Focused electron beam induced processing (FEBID) equipments are the "all in one" tools for high resolution investigation, and modification of nano-devices. Focused electron beam induced deposition from a gaseous precursor usually results in a nano-composite sub-structured material, in which the interesting material is embedded in an amorphous carbonaceous matrix. Using the Hydrogen free tetraisocyanatosilane Si(NCO)₄ molecule as Si source, we show how a controlled oxygen flux, simultaneously injected with the precursor vapors, causes contaminants to vanish from the FEB deposits obtained and leads to the deposition of pure SiO₂. The chemical composition of the FEBID material could be controlled from SiC₂NO₃ to SiO₂, the latter containing undetectable foreign element contamination. The [O₂] / [TICS] ratio needed to obtain SiO₂ in our FEB deposition equipment is larger than 300. The evolution of the FEBID material chemical composition is presented as function of the [O₂] / [TICS] molecular flux ratios. A hypothetical decomposition pathway of this silane under these conditions is discussed based on the different species formed under electron bombardment of TICS. Transmission electron microscopy investigations demonstrated that the deposited oxide is smooth (roughness sub 2nm) and amorphous. Infrared spectroscopy confirmed the low concentration of hydroxyl groups. The Hydrogen content of the deposited oxide, measured by elastic recoil detection analysis, is as low as 1 at%. 193nm wavelength AIMS investigations of 125nm thick SiO₂ pads (obtained with [O₂] / [TICS] = 325) showed an undetectable light absorption.

Citation Download Citation

Alexandre Perentes, Patrik Hoffmann, and Frans Munnik "Focused electron beam induced deposition of pure SIO₂", Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 65331Q (3 May 2007); https://doi.org/10.1117/12.736918

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available