Germanium as an integrated resistor material in RF MEMS switches

K. Grenier; C. Bordas; S. Pinaud; L. Salvagnac; D. Dubuc

doi:10.1117/12.722039

17 May 2007 Germanium as an integrated resistor material in RF MEMS switches

K. Grenier, C. Bordas, S. Pinaud, L. Salvagnac, D. Dubuc

Proceedings Volume 6589, Smart Sensors, Actuators, and MEMS III; 65890X (2007) https://doi.org/10.1117/12.722039
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain

Abstract

This paper introduces the use of germanium as resistive material in RF MicroElectroMechanical (MEMS) devices. Integrated resistors are indeed highly required into RF MEMS switches, in order to prevent any RF signal leakage in the bias lines and also to be compatible with ICs. Germanium material presents strong advantages compared to others. It is widely used in microtechnologies, notably as an important semi-conductor in SiGe transistors as well as sacrificial or structural layers and also mask layer in various processes (Si micromachining especially). But it also presents a great electrical characteristic with a very high resistivity value. This property is particularly interesting for the elaboration of integrated resistors for RF components as it assures miniaturised resistors in total agreement with electromagnetic requirements. Its compatibility as resistive material in MEMS has been carried out. Its integration in the entire MEMS process has been fruitfully achieved and led to the successful demonstration and validation of integrated Ge resistors into serial RF MEMS variable capacitors, without any RF perturbations.

Citation Download Citation

K. Grenier, C. Bordas, S. Pinaud, L. Salvagnac, and D. Dubuc "Germanium as an integrated resistor material in RF MEMS switches", Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65890X (17 May 2007); https://doi.org/10.1117/12.722039

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