Paper
11 May 2007 Qualification of design-optimized multi-zone hotplate for 45nm node mask making
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Abstract
The demand for ever smaller features in integrated circuit manufacturing continues to put more stringent requirements on photomask fabrication, particularly with respect to critical dimension (CD) control. A high resolution process for making attenuated-phase-shift masks (attPSM) for the 45nm node with a negative-tone chemically amplified resist (nCAR), utilizing a new precision bake system, was evaluated. This process showed a significant performance improvement in critical dimension uniformity (CDU), respective to an established process based on an APB5500 system. A CD-uniformity improvement from 2.1nm CD 3σ to 1.3nm CD 3σ (40%) was achieved on a demanding layout. The new precision bake system utilizes an improved multi-zone hotplate design and control algorithm, which enables highly precise temperature controllability, facilitating a superior temperature ramp-up performance, as well as significantly improved temperature setpoint stability, as has been measured with a 25-point sensor mask for a 95°C bake process. The new precision bake system shall now be introduced to the market within the HamaTech MaskTrack series.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lothar Berger, Peter Dress, Shun-Ho Yang, and Chien-Hsien Kuo "Qualification of design-optimized multi-zone hotplate for 45nm node mask making", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070D (11 May 2007); https://doi.org/10.1117/12.728926
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KEYWORDS
Sensors

Temperature metrology

Critical dimension metrology

Photomasks

Optimization (mathematics)

Chemically amplified resists

Temperature sensors

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