Paper
25 May 2007 Automated aerial image based CD metrology initiated by pattern marking with photomask layout data
Grant Davis, Sun Young Choi, Eui Hee Jung, Arne Seyfarth, Hans van Doornmalen, Eric Poortinga
Author Affiliations +
Abstract
The photomask is a critical element in the lithographic image transfer process from the drawn layout to the final structures on the wafer. The non-linearity of the imaging process and the related MEEF impose a tight control requirement on the photomask critical dimensions. Critical dimensions can be measured in aerial images with hardware emulation. This is a more recent complement to the standard scanning electron microscope measurement of wafers and photomasks. Aerial image measurement includes non-linear, 3-dimensional, and materials effects on imaging that cannot be observed directly by SEM measurement of the mask. Aerial image measurement excludes the processing effects of printing and etching on the wafer. This presents a unique contribution to the difficult process control and modeling tasks in mask making. In the past, aerial image measurements have been used mainly to characterize the printability of mask repair sites. Development of photomask CD characterization with the AIMSTM tool was motivated by the benefit of MEEF sensitivity and the shorter feedback loop compared to wafer exposures. This paper describes a new application that includes: an improved interface for the selection of meaningful locations using the photomask and design layout data with the CalibreTM Metrology Interface, an automated recipe generation process, an automated measurement process, and automated analysis and result reporting on a Carl Zeiss AIMSTM system.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grant Davis, Sun Young Choi, Eui Hee Jung, Arne Seyfarth, Hans van Doornmalen, and Eric Poortinga "Automated aerial image based CD metrology initiated by pattern marking with photomask layout data", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66072A (25 May 2007); https://doi.org/10.1117/12.728993
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CITATIONS
Cited by 4 scholarly publications and 2 patents.
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KEYWORDS
Photomasks

Image processing

Critical dimension metrology

Semiconducting wafers

Design for manufacturing

Metrology

Visualization

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