CO2 laser-produced Sn plasma as the solution for high-volume manufacturing EUV lithography

Akira Endo; Tamotsu Abe; Hideo Hoshino; Yoshifumi Ueno; Masaki Nakano; Takeshi Asayama; Hiroshi Komori; Georg Soumagne; Hakaru Mizoguchi; Akira Sumitani; Koichi Toyoda

doi:10.1117/12.732254

13 September 2007 CO₂ laser-produced Sn plasma as the solution for high-volume manufacturing EUV lithography

Akira Endo, Tamotsu Abe, Hideo Hoshino, Yoshifumi Ueno, Masaki Nakano, Takeshi Asayama, Hiroshi Komori, Georg Soumagne, Hakaru Mizoguchi, Akira Sumitani, Koichi Toyoda

Author Affiliations +

Proceedings Volume 6703, Ultrafast X-Ray Sources and Detectors; 670309 (2007) https://doi.org/10.1117/12.732254
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

We are developing a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The light source is based on a short pulse, high power, high repetition rate CO₂ master oscillator power amplifier (MOPA) laser system and a Tin droplet target. A maximum conversion efficiency of 4.5% was measured for a CO₂ laser driven Sn plasma having a narrow spectrum at 13.5 nm. In addition, low debris generation was observed. The CO₂ MOPA laser system is based on commercial high power cw CO₂ lasers. We have achieved an average laser power of 7 kW at 100 kHz by a single laser beam with good beam quality. In a first step, a 50-W light source is under development. Based on a 10-kW CO₂ laser, this light source is scalable to more than 100 W EUV in-band power.

Citation Download Citation

Akira Endo, Tamotsu Abe, Hideo Hoshino, Yoshifumi Ueno, Masaki Nakano, Takeshi Asayama, Hiroshi Komori, Georg Soumagne, Hakaru Mizoguchi, Akira Sumitani, and Koichi Toyoda "CO₂ laser-produced Sn plasma as the solution for high-volume manufacturing EUV lithography", Proc. SPIE 6703, Ultrafast X-Ray Sources and Detectors, 670309 (13 September 2007); https://doi.org/10.1117/12.732254

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