Paper
30 October 2007 DPL performance analysis strategy with conventional workflow
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Abstract
DPL (Double Patterning Lithography) has been in public as one of candidates for 45nm or 32nm HP since ITRS2006update disclosed. A lot of report of the performances and issues regarding to DPL were published. The current main concerns are evaluation of the infrastructures such as decomposition software, advanced photomasks, higher-NA exposure tool and leading-edge hard-mask process. If there is simpler procedure to evaluate DPL using a conventional environment without hard-mask process, the development of DPL will be accelerated. Here, the simple evaluation procedure for DPL using actual photomasks combining double exposure technique was proposed. The pseudo DPL result in terms of mask CD uniformity, image placement and overlay were demonstrated. In this evaluation procedure, decomposition restriction, mask latitude and fabrication load were also discussed
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobuhito Toyama, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Junji Miyazaki, Alek Chen, and Nandasiri Samarakone "DPL performance analysis strategy with conventional workflow", Proc. SPIE 6730, Photomask Technology 2007, 67301I (30 October 2007); https://doi.org/10.1117/12.747380
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Semiconducting wafers

Critical dimension metrology

Overlay metrology

Lithography

Optical proximity correction

Scanning electron microscopy

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