Photonic and related device applications of nano-crystalline silicon

N. Koshida; B. Gelloz

doi:10.1117/12.732812

10 September 2007 Photonic and related device applications of nano-crystalline silicon

N. Koshida, B. Gelloz

Proceedings Volume 6775, Active and Passive Optical Components for Communications VII; 67750N (2007) https://doi.org/10.1117/12.732812
Event: Optics East, 2007, Boston, MA, United States

Abstract

As the scaling of single-crystalline silicon (c-Si) size comes into the region below 4 nm corresponding to the Bohr radius of exciton in c-Si, the original optical, electrical, thermal, and chemical properties of c-Si are substantially modified due to the occurrence of quantum confinement effect. As a consequence, some useful functions are induced in various manners. Nanoporous silicon (PS), composed of highly packed quantum-sized nanosilicon dots, is regarded as a typical quantum silicon material. This paper summarizes various physical effects induced in PS: bannd gap widening, complete carrier depletion, surface activity, and so on. To indicate their technological potential, the present status of application studies is addressed in terms of visible electroluminescent device, components for photonic integration, field-induced ballistic electron emitter, thermally induced ultrasonic emitter, and biocompatible scaffold. Further technological potential is discussed from viewpoints of exploring functional integration.

Citation Download Citation

N. Koshida and B. Gelloz "Photonic and related device applications of nano-crystalline silicon", Proc. SPIE 6775, Active and Passive Optical Components for Communications VII, 67750N (10 September 2007); https://doi.org/10.1117/12.732812

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