High-power InGaN LEDs: present status and future prospects

B. Hahn; A. Weimar; M. Peter; J. Baur

doi:10.1117/12.767255

12 February 2008 High-power InGaN LEDs: present status and future prospects

B. Hahn, A. Weimar, M. Peter, J. Baur

Proceedings Volume 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII; 691004 (2008) https://doi.org/10.1117/12.767255
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The ThinGaN^® technology of OSRAM Opto semiconductors enables high power LEDs with wall plug efficiencies of currently up to 50%, enabling efficacies of > 100lm/W for white and green LEDs. The good scalability of the technology enables devices which deliver high luminous flux. The future limitations regarding efficacy of white LED can be estimated to be 150lm/W for high color rendering. Besides efficiency long term stability and high temperature capability are requirements for market adoption

Citation Download Citation

B. Hahn, A. Weimar, M. Peter, and J. Baur "High-power InGaN LEDs: present status and future prospects", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 691004 (12 February 2008); https://doi.org/10.1117/12.767255

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