The rapid introduction of immersion lithography for NAND flash: challenges and experience

Chan-Tsun Wu; Hung Ming Lin; Wei-Ming Wu; Meng-Hsun Chan; Benjamin Szu-Min Lin; Kuan-Heng Lin; Andrew J. Hazelton; Toshio Ohhashi; Katsushi Nakano; Yasuhiro Iriuchijima; Chunhsin Lee; Long Hung

doi:10.1117/12.772448

11 April 2008 The rapid introduction of immersion lithography for NAND flash: challenges and experience

Chan-Tsun Wu, Hung Ming Lin, Wei-Ming Wu, Meng-Hsun Chan, Benjamin Szu-Min Lin, Kuan-Heng Lin, Andrew J. Hazelton, Toshio Ohhashi, Katsushi Nakano, Yasuhiro Iriuchijima, Chunhsin Lee, Long Hung

Author Affiliations +

Proceedings Volume 6924, Optical Microlithography XXI; 69241A (2008) https://doi.org/10.1117/12.772448
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Immersion technology is definitely the mainstream lithography technology for NAND FLASH in recent years since hyper-NA immersion technology drives the resolution limit down to the 40-50 nm half pitch region. Immersion defectivity and overlay issues are key challenges before introducing immersion technology into mass production. In this work, both long term immersion defectivity and overlay data, as well as good photoresist performance, show the Nikon S610C immersion scanner plus LITHIUS i+ cluster is capable of 40-50 nm NAND FLASH mass production. Immersion defects are classified based on their causes, and no tool specific immersion defects, e.g. bubbles and water marks, were found in the Nikon S610C plus TEL LITHIUS i+ cluster. Materials-induced immersion defects require more attention to achieve production-worthy results.

Citation Download Citation

Chan-Tsun Wu, Hung Ming Lin, Wei-Ming Wu, Meng-Hsun Chan, Benjamin Szu-Min Lin, Kuan-Heng Lin, Andrew J. Hazelton, Toshio Ohhashi, Katsushi Nakano, Yasuhiro Iriuchijima, Chunhsin Lee, and Long Hung "The rapid introduction of immersion lithography for NAND flash: challenges and experience", Proc. SPIE 6924, Optical Microlithography XXI, 69241A (11 April 2008); https://doi.org/10.1117/12.772448

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available