Simulation of SiC deposition in a hot wall CVD reactor

Wei Jia; Yuming Zhang; Yimen Zhang; Renxu Jia; Hui Guo

doi:10.1117/12.792270

11 March 2008 Simulation of SiC deposition in a hot wall CVD reactor

Wei Jia, Yuming Zhang, Yimen Zhang, Renxu Jia, Hui Guo

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842Q (2008) https://doi.org/10.1117/12.792270
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

The present study focuses on the numerical study of 4H-SiC film deposition on a horizontally 4H-SiC substrate with H₂ as the carrier gas and C₃H₈ and SiH₄ as precursors in low pressure using a hot wall CVD reactor. The growth rate along the susceptor is calculated. The effect of inlet C/Si ratio on the growth rate is investigated. Among the reacting species C₂H₂, CH₃SiH₂SiH, Si and SiH₂ contribute most to growth.

Citation Download Citation

Wei Jia, Yuming Zhang, Yimen Zhang, Renxu Jia, and Hui Guo "Simulation of SiC deposition in a hot wall CVD reactor", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842Q (11 March 2008); https://doi.org/10.1117/12.792270

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