UV-NIL mask making and imprint evaluation

Akiko Fujii; Yuko Sakai; Jun Mizuochi; Takaaki Hiraka; Satoshi Yusa; Koki Kuriyama; Masashi Sakaki; Takanori Sutou; Shiho Sasaki; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi

doi:10.1117/12.793073

19 May 2008 UV-NIL mask making and imprint evaluation

Akiko Fujii, Yuko Sakai, Jun Mizuochi, Takaaki Hiraka, Satoshi Yusa, Koki Kuriyama, Masashi Sakaki, Takanori Sutou, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Author Affiliations +

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70281W (2008) https://doi.org/10.1117/12.793073
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

UV NIL shows excellent resolution capability with remarkable low line edge roughness, and has been attracting pioneers in the industry who were searching for the finest patterns. We have been focused on the resolution improvement in mask making, and with a 100kV acceleration voltage EB writer process, we have achieved down to 18nm resolution, and have established a mask making process to meet the requirements of the pioneers. Usually such masks needed just a small field (several hundred microns square or so). Now, UV NIL exploration seems to have reached the step of feasibility study for mass production. Here, instead of a small field, a full chip field mask is required, though the resolution demand is not as tough as for the extremely advanced usage. The 100kV EB writers are adopting spot beams to generate the pattern and have a fatally low throughput if we need full chip writing. In this work, we focused on the 50keV variable shaped beam (VSB) EB writers, which are used in current 4X photomask manufacturing. The 50kV VSB writers can generate full chip pattern in a reasonable time, and by choosing the right patterning material and process, we could achieve resolution down to 32nm. Our initial results of 32nm class NIL masks with full chip field size will be shown and resolution improvement plan to further technology nodes will be discussed.

Citation Download Citation

Akiko Fujii, Yuko Sakai, Jun Mizuochi, Takaaki Hiraka, Satoshi Yusa, Koki Kuriyama, Masashi Sakaki, Takanori Sutou, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, and Naoya Hayashi "UV-NIL mask making and imprint evaluation", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281W (19 May 2008); https://doi.org/10.1117/12.793073

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