Paper
17 October 2008 EUVL practical mask structure with light shield area for 32nm half pitch and beyond
Author Affiliations +
Abstract
The effect of mask structure with light shield area on the printability in EUV lithography was studied. When very thin absorber on EUVL mask is used for ULSI application, it then becomes necessary to create EUV light shield area on the mask in order to suppress possible leakage of EUV light from neighboring exposure shots. We proposed and fabricated two types of masks with very thin absorber and light shield area structure. For both types of masks we demonstrated high shield performances at light shield areas by employing a Small Field Exposure Tool (SFET).
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kamo, Hajime Aoyama, Toshihiko Tanaka, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Naoya Hayashi, Tsutomu Shoki, Youichi Usui, and Morio Hosoya "EUVL practical mask structure with light shield area for 32nm half pitch and beyond", Proc. SPIE 7122, Photomask Technology 2008, 712227 (17 October 2008); https://doi.org/10.1117/12.801576
Lens.org Logo
CITATIONS
Cited by 9 scholarly publications and 5 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Etching

Reflectivity

Extreme ultraviolet lithography

Multilayers

Photoresist processing

Coating

Back to Top