Paper
17 October 2008 Empirical study of OPC metrology requirements for 32-nm node logic
Brian S. Ward, Lena Zavylova, Peter de Bisschop, Jeroen van de Kerkhove
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Abstract
We evaluate the relationship between the number of measurements used to create each data point in an OPC model data set and resulting model quality for target 32-nm logic node applications. Generated data sets will range from singlemeasurement, unfiltered data sets to many-measurement averages based on filtered results. Intermediate measurementcount averages will also be evaluated in an attempt to quantify the tradeoff between raw measurements per data point and resulting model quality. Finally, other variations will also be considered, such as automated versus manual data filtering. The auto-fitted OPC models will be compared to identify metrology recommendations for 32-nm logic node modeling.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian S. Ward, Lena Zavylova, Peter de Bisschop, and Jeroen van de Kerkhove "Empirical study of OPC metrology requirements for 32-nm node logic", Proc. SPIE 7122, Photomask Technology 2008, 712242 (17 October 2008); https://doi.org/10.1117/12.801458
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KEYWORDS
Data modeling

Calibration

Error analysis

Critical dimension metrology

Statistical modeling

Optical proximity correction

Logic

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