Paper
18 March 2009 RLS tradeoff vs. quantum yield of high PAG EUV resists
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Abstract
The effect of higher film quantum yields (FQYs) on the resolution, line-edge roughness, and sensitivity (RLS) tradeoff was evaluated for extreme ultraviolet (EUV, 13.5 nm) photoresists. We determined the FQY of increasingly high levels of an iodonium photoacid generator (PAG) using two acid detection methods. First, base titration methods were used to determine C-parameters for acid generation, and second, an acid-sensitive dye (Coumarin-6) was used to determine the amount of acid generated and ultimately, to determine absorbance and FQYs for both acid detection methods. The RLS performance of photoresists containing increasing levels of PAG up to ultrahigh loadings (5-40 wt% PAG) was evaluated. RLS was characterized using two methods: • KLUP resist performance •Z-Parameter (Z = LER2*Esize*Resolution3)
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Craig Higgins, Alin Antohe, Greg Denbeaux, Seth Kruger, Jacque Georger, and Robert Brainard "RLS tradeoff vs. quantum yield of high PAG EUV resists", Proc. SPIE 7271, Alternative Lithographic Technologies, 727147 (18 March 2009); https://doi.org/10.1117/12.814307
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Cited by 13 scholarly publications.
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KEYWORDS
Quantum efficiency

Extreme ultraviolet

Line edge roughness

Extreme ultraviolet lithography

Absorbance

Semiconducting wafers

Absorption

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