A practical application of multiple parameters profile characterization (MPPC) using CD-SEM on production wafers using Hyper-NA lithography

T. Ishimoto; K. Sekiguchi; N. Hasegawa; K. Watanabe; D. Laidler; S. Cheng

doi:10.1117/12.814164

23 March 2009 A practical application of multiple parameters profile characterization (MPPC) using CD-SEM on production wafers using Hyper-NA lithography

T. Ishimoto, K. Sekiguchi, N. Hasegawa, K. Watanabe, D. Laidler, S. Cheng

Author Affiliations +

Proceedings Volume 7272, Metrology, Inspection, and Process Control for Microlithography XXIII; 72722E (2009) https://doi.org/10.1117/12.814164
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

With the improved resolution of immersion lithography by Hyper-NA (Numerical Aperture) and Low-k1 scaling factor, lithographers face the problem of decreasing Depth of Focus and in turn reduced process latitude. It is important for high precision process monitoring the decrease in process latitude which comes with Hyper-NA and Low-k1, in order to be able to successfully introduce RET (Resolution Enhancement Techniques) lithography into high volume production. MPPC (Multiple Parameters Profile Characterization) is a function which provides the ability to extract pattern shape information from a measured e-beam signal. MPPC function becomes key technique of pattern profile verification by top down SEM images for the Hyper-NA lithography, for that reason it can be detected to relate to pattern profile change. In this work, we explored a practical application of MPPC function by making clear the relationship between MPPC indices and Litho parameters concerning specific lithography application. We performed the two kinds of experiment for verifying effectiveness of the MPPC function. First experiment explored printing image contrast by using the WB with exposure pattern shape change related from image printing condition. Second experiment explored pattern shape change due to resist contrast with changing the process conditions by using WB behavior. In consequence, we demonstrated a practical application of MPPC function by quantification using WB and assessed the process monitoring capability. Our challenge of this research is the practical application of the MPPC function on production wafers concerning specific lithography application. We believe that this application can be effectual in process monitoring and control for Hyper-NA lithography.

Citation Download Citation

T. Ishimoto, K. Sekiguchi, N. Hasegawa, K. Watanabe, D. Laidler, and S. Cheng "A practical application of multiple parameters profile characterization (MPPC) using CD-SEM on production wafers using Hyper-NA lithography", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72722E (23 March 2009); https://doi.org/10.1117/12.814164

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KEYWORDS

Critical dimension metrology

Lithography

Semiconducting wafers

Process control

Finite element methods

Scanning electron microscopy

Printing

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