Newly developed positive tone resists for Posi/Posi double patterning process

Tsuyoshi Nakamura; Masaru Takeshita; Satoshi Maemori; Ryusuke Uchida; Ryoichi Takasu; Katsumi Ohmori

doi:10.1117/12.814028

1 April 2009 Newly developed positive tone resists for Posi/Posi double patterning process

Tsuyoshi Nakamura, Masaru Takeshita, Satoshi Maemori, Ryusuke Uchida, Ryoichi Takasu, Katsumi Ohmori

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 727304 (2009) https://doi.org/10.1117/12.814028
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Double patterning with 193nm immersion lithography is generally recognized as a candidate for 32nm hp node and possibly beyond with recent progress. LLE (Litho-Litho-Etch) could be good candidate for double patterning method because of its simplicity but the good solution hasn't been proposed yet. In last year, freezing free Posi/Nega process was introduced as candidate for LLE process. But that had an issue that the resolution of negative tone resist was little bit poor for 1L/3S pattern compared with positive tone. Thus it's better to choose positive tone as 2nd resist for this reason. And then Posi/Posi process without any freezing material has been investigated and successfully established to image double patterning. Posi/Posi process without any freezing material has successfully achieved to image below 32nm hp. Furthermore contact hole imaging was succeeded by using cross-line method and image reverse method. We present the productivity study of freezing free Posi/Posi process on Cross-lined contact hole, critical resolution for pitch splitting and reverse imaging for contact hole.

Citation Download Citation

Tsuyoshi Nakamura, Masaru Takeshita, Satoshi Maemori, Ryusuke Uchida, Ryoichi Takasu, and Katsumi Ohmori "Newly developed positive tone resists for Posi/Posi double patterning process", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727304 (1 April 2009); https://doi.org/10.1117/12.814028

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