Double patterning process with freezing technique

Goji Wakamatsu; Yusuke Anno; Masafumi Hori; Tomohiro Kakizawa; Michihiro Mita; Kenji Hoshiko; Takeo Shioya; Koichi Fujiwara; Shiro Kusumoto; Yoshikazu Yamaguchi; Tsutomu Shimokawa

doi:10.1117/12.814073

1 April 2009 Double patterning process with freezing technique

Goji Wakamatsu, Yusuke Anno, Masafumi Hori, Tomohiro Kakizawa, Michihiro Mita, Kenji Hoshiko, Takeo Shioya, Koichi Fujiwara, Shiro Kusumoto, Yoshikazu Yamaguchi, Tsutomu Shimokawa

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Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72730B (2009) https://doi.org/10.1117/12.814073
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Double patterning is one of the most promising lithography techniques for sub-40nm half-pitch device manufacturing. Several variations of double patterning processes have been reported by research groups, including a dual-trench process (litho-etch-litho-etch) and a dual-line process (litho-litho-etch). Between these, the dual-line process attracts the most attention because it is a simple process and achieves high throughput. However, there is concern that the second lithography process damages the first lithography patterns in the dual-line process. Therefore, new technology must be developed to keep the configuration of first lithography patterns during the second lithography step, and to make this patterning process practical. Recently, we succeeded in forming 32 nm half-pitch LS lithography patterns by the introduction of a new "freezing" step. This step involves covering the first lithography pattern with a chemical freezing material to prevent damage by the second lithography process. This process, the so called "litho-freezing-litho-etch" process, will achieve higher throughput and lower cost compared to litho-etch-litho-etch. In this study, the performance of this chemical freezing double patterning process is investigated for various applications using a hyper NA immersion exposure tool. Imaging results including process window and etching results of sub-30nm half-pitch LS and 40nm half-pitch CH with this freezing process are shown. Additionally, items such as critical dimension uniformity and defect inspection using the freezing process were reviewed.

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Goji Wakamatsu, Yusuke Anno, Masafumi Hori, Tomohiro Kakizawa, Michihiro Mita, Kenji Hoshiko, Takeo Shioya, Koichi Fujiwara, Shiro Kusumoto, Yoshikazu Yamaguchi, and Tsutomu Shimokawa "Double patterning process with freezing technique", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730B (1 April 2009); https://doi.org/10.1117/12.814073

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