Paper
11 May 2009 Smart way to determine and guarantee mask specifications: tradeoff between cost and quality
Author Affiliations +
Abstract
Mask set price is soaring along with technology node advancement. One reason is that the number of masks per set is increasing with the geometry scaling. Another reason is that low k1 lithography with highly complex OPCs tightens dimensional mask specifications as to result in higher mask-making tool costs and lower production yield. Under these circumstances, tool cost reduction and production yield improvement are immensely required to reduce mask cost. Expensive quality-assured tools are indispensable to achieve the desired accuracy. Then, higher throughput and technical applicability of the same tool over multiple generations are definitely needed to improve total tool CoO. Meanwhile, not only such conventional basic approaches as improving field level and process performance but optimizing mask specifications efficiently is emerging as a key factor for keeping mask production yield high. Usually mask specifications are determined by the error budget allocated from the total lithography budget. In order to cope with the tighter specifications some sensible approaches have recently been proposed. Mask DFM is receiving particular attention as a new method being strongly linked to lithography and wafer fabrication technologies (1)(2)(3)(4). In this presentation, logical way to define the main mask specifications such as CD, defect and image placement accuracy is shown and sensible ways to sustain them are referred.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fumiaki Shigemitsu "Smart way to determine and guarantee mask specifications: tradeoff between cost and quality", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790T (11 May 2009); https://doi.org/10.1117/12.824270
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KEYWORDS
Photomasks

Inspection

Tolerancing

Semiconducting wafers

Lithography

Critical dimension metrology

Scanning electron microscopy

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