Measurement of thickness of native silicon dioxide with a scanning electron microscope

V. P. Gavrilenko; Yu. A. Novikov; A. V. Rakov; P. A. Todua

doi:10.1117/12.826190

21 August 2009 Measurement of thickness of native silicon dioxide with a scanning electron microscope

V. P. Gavrilenko, Yu. A. Novikov, A. V. Rakov, P. A. Todua

Proceedings Volume 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III; 740507 (2009) https://doi.org/10.1117/12.826190
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

We are describing a method of measuring thickness of a native silicon dioxide film using a scanning electron microscope. The method consists of etch removal of native silicon dioxide from the surface of trenches in silicon with a right-angled profile, with a subsequent measurement of an increase in trench width. The thickness of a native silicon dioxide film measured with the help of this method turned out to be 2.39 ± 0.12 nm.

Citation Download Citation

V. P. Gavrilenko, Yu. A. Novikov, A. V. Rakov, and P. A. Todua "Measurement of thickness of native silicon dioxide with a scanning electron microscope", Proc. SPIE 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III, 740507 (21 August 2009); https://doi.org/10.1117/12.826190

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