SEM image contrast modeling for mask and wafer metrology

C. G. Frase; D. Gnieser; K.-P. Johnsen; W. Häßler-Grohne; R. Tutsch; H. Bosse

doi:10.1117/12.835184

27 May 2009 SEM image contrast modeling for mask and wafer metrology

C. G. Frase, D. Gnieser, K.-P. Johnsen, W. Häßler-Grohne, R. Tutsch, H. Bosse

Proceedings Volume 7470, 25th European Mask and Lithography Conference; 74700M (2009) https://doi.org/10.1117/12.835184
Event: 25th European Mask and Lithography Conference, 2009, Dresden, Germany

Abstract

Scanning electron microscopy (SEM) is widely used as a fast and high resolution measurement method capable to per-form characterizations of the smallest isolated and dense features which are to be specified and produced on photomasks and wafers down to the 32 nm node and below. Furthermore, electron beam writing tools for mask or direct wafer patterning need electron beam based metrology capabilities for the required high precision alignment purposes. All of these applications benefit from a proper physical understanding of the electron interaction processes in the measured features of interest and suitable simulation capabilities in order to model the measured SEM image or signal contrasts. In this contribution we will report on a new Monte Carlo based modular simulation package, developed at the PTB and called MCSEM, which allows to model secondary as well as backscattered electron image contrasts on 3-dimensional object features. The fundamentals, basic features as well as first applications of the new simulation package MCSEM in the nanometrology field will be explained. Where appropriate, also other existing Monte Carlo based simulation pack-ages still are in use at the PTB, examples and comparisons with the new MCSEM simulation will be given.

Citation Download Citation

C. G. Frase, D. Gnieser, K.-P. Johnsen, W. Häßler-Grohne, R. Tutsch, and H. Bosse "SEM image contrast modeling for mask and wafer metrology", Proc. SPIE 7470, 25th European Mask and Lithography Conference, 74700M (27 May 2009); https://doi.org/10.1117/12.835184

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