Formation of molecular transistor electrodes by electromigration

A. S. Stepanov; E. S. Soldatov; O. V. Snigirev

doi:10.1117/12.854681

26 February 2010 Formation of molecular transistor electrodes by electromigration

A. S. Stepanov, E. S. Soldatov, O. V. Snigirev

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752112 (2010) https://doi.org/10.1117/12.854681
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

In this work we obtained the gaps less than 5 nm wide in the thin (15 nm) gold films. These gaps can be used for the creation of the room-temperature single-electron transistor. We demonstrated the need of deposition of Au without an adhesive layer and elaborated the technique of the creation of thin (15 nm) and narrow (200 nm) gold electrodes on Al₂O₃. It provides a sufficient adhesion of Au film even without a buffer layer and subsequent successive gap implementation.

Citation Download Citation

A. S. Stepanov, E. S. Soldatov, and O. V. Snigirev "Formation of molecular transistor electrodes by electromigration", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752112 (26 February 2010); https://doi.org/10.1117/12.854681

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