Residual stress in porous silicon film with micro-Raman spectroscopy

Wei Qiu; Qiu Li; Yilan Kang; Zhenkun Lei

doi:10.1117/12.851264

14 April 2010 Residual stress in porous silicon film with micro-Raman spectroscopy

Wei Qiu, Qiu Li, Yilan Kang, Zhenkun Lei

Proceedings Volume 7522, Fourth International Conference on Experimental Mechanics; 75221M (2010) https://doi.org/10.1117/12.851264
Event: Fourth International Conference on Experimental Mechanics, 2009, Singapore, Singapore

Abstract

Porous silicon (PS) film was widely used in micro-systems sensors duo to its special properties. Nevertheless, intrinsic and processing residual stresses always introduced into porous silicon, always inducing the collapses and cracks inside the film and on the interface when the PS structure in service and/or during manufacture and storage. This paper presents a systematic study on the Raman stress measurement of porous silicon. Firstly, a theoretical model on the analytic relationship between stress and Raman-shift is presented by analyzing the micro-structures and transversely isotropy property of forest-like porous silicon film prepared on Si wafer by electrochemical etching. Meanwhile, the nano-indentation and digital Speckle correlations is utilized to determined the Young's moduli and Poisson's ratios of the PS samples, respectively. Based on the theoretical model and material parameters above, the coefficients in the Raman to stress relationship of porous silicon are achieved. By applying Micro-Raman spectroscopy, the distribution of intrinsic residual stress along the depth of PS-film/Si-substrate structure is measured. Then, a dynamical capillarity experiment is preformed to analyze the real-time stress transformation during PS drying, and the failure mechanisms by capillarity are discussed.

Citation Download Citation

Wei Qiu, Qiu Li, Yilan Kang, and Zhenkun Lei "Residual stress in porous silicon film with micro-Raman spectroscopy", Proc. SPIE 7522, Fourth International Conference on Experimental Mechanics, 75221M (14 April 2010); https://doi.org/10.1117/12.851264

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Picosecond phenomena

Silicon

Raman spectroscopy

Silicon films

Micro raman spectroscopy

Crystals

Interfaces

Show All Keywords

Keywords/Phrases

Search In:

Publication Years