Paper
15 May 2010 Proximity effect correction sensitivity analysis
Alex Zepka, Rainer Zimmermann
Author Affiliations +
Proceedings Volume 7545, 26th European Mask and Lithography Conference; 75450E (2010) https://doi.org/10.1117/12.863710
Event: 26th European Mask and Lithography Conference, 2010, Grenoble, France
Abstract
Determining the quality of a proximity effect correction (PEC) is often done via 1-dimensional measurements such as: CD deviations from target, corner rounding, or line-end shortening. An alternative approach would compare the entire perimeter of the exposed shape and its original design. Unfortunately, this is not a viable solution as there is a practical limit to the number of metrology measurements that can be done in a reasonable amount of time. In this paper we make use of simulated results and introduce a method which may be considered complementary to the standard way of PEC qualification. It compares simulated contours with the target layout via a Boolean XOR operation with the area of the XOR differences providing a direct measure of how close a corrected layout approximates the target.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alex Zepka and Rainer Zimmermann "Proximity effect correction sensitivity analysis", Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450E (15 May 2010); https://doi.org/10.1117/12.863710
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KEYWORDS
Semiconducting wafers

Calibration

Data modeling

Metrology

Statistical analysis

Time metrology

Electron beam lithography

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