Paper
19 March 2010 Complex species and pressure dependence of intensity scaling laws for contamination rates of EUV optics determined by XPS and ellipsometry
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Abstract
The goal of our ongoing optics-contamination program is to estimate the magnitude and scaling laws of the contamination rates of optics exposed to extreme-ultraviolet (EUV) radiation in the presence of various contaminant species expected in the EUV-lithography-tool environment by exposing samples to in-band 13.5 nm light from our synchrotron in the presence of fixed partial pressures of admitted gases. We report contamination rate measurements on TiO2-capped samples for species observed in separate resist-outgassing measurements (benzene, isobutene, toluene and tert-butylbenzene) in the pressure range (10-8 to 10-5) Pa. We use two spatially-resolved surface probe techniques, spectroscopic ellipsometry and X-ray photoelectron spectroscopy, to determine the thickness of deposited carbon. The correlation and sensitivities of these techniques are discussed. The high sensitivity of ellipsometry shows that contamination rates for some species have a pronounced non-linear intensity dependence and can be strongly influenced by admixtures of water vapor, while the rates for other species are linear over the same intensity range and are less affected by ambient water. Understanding scaling laws is critical when estimating optic lifetimes or cleaning cycles by extrapolating over the 3-to-6 orders of magnitude between accelerated-testing and tool-environment partial pressures.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. B. Hill, N. S. Faradzhev, L. J. Richter, and T. B. Lucatorto "Complex species and pressure dependence of intensity scaling laws for contamination rates of EUV optics determined by XPS and ellipsometry", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360E (19 March 2010); https://doi.org/10.1117/12.846849
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Cited by 8 scholarly publications.
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KEYWORDS
Contamination

Extreme ultraviolet lithography

Carbon

Molecules

Extreme ultraviolet

Protactinium

EUV optics

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