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EUV source for actinic mask metrology, particularly for defect inspection, requires extremely high brightness. The selfabsorption
of radiation limits the in-band EUV radiance of the source plasma and the etendue constraint limits the usable
power of a conventional single unit EUV source. Theoretical study and numerical modelling has been carried out to
address fundamental issues in tin and xenon plasmas and to optimize the performance of EUV sources. The highly
ionized xenon plasma in the presence of fast electrons demonstrates the enhanced radiance. Theoretical models and
robust modelling tools are being further developed under an international collaboration project FIRE in the frame of the
EU FP7 IAPP program. NANO-UV is delivering a new generation of EUV light source with an intrinsic photon
collector. Extensive numerical modelling has provided basic numbers to select the optimal regimes for tin and xenon
based source operation. From these designs, a family of specially configured multiplexed source structures is being
introduced to address the mask metrology needs.
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