Maskless lithography and nanopatterning with electron and ion multibeam projection

Elmar Platzgummer

doi:10.1117/12.852226

1 April 2010 Maskless lithography and nanopatterning with electron and ion multibeam projection

Elmar Platzgummer

Author Affiliations +

Proceedings Volume 7637, Alternative Lithographic Technologies II; 763703 (2010) https://doi.org/10.1117/12.852226
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Multi-beam writing becomes mandatory in order to stay within reasonable realization times for the fabrication of leading-edge complex masks and templates. IMS Nanofabrication has developed multi-beam projection techniques implementing a programmable aperture plate system (APS) and charged-particle projection optics with 200x reduction. Proof-of-concept of multi-beam writing was demonstrated in 2009 with 10 keV ion multi-beams and 50 keV electron multi-beams using 43-thousand and 2.5-thousand, respectively, programmable 12.5nm sized beams. In Q4 2009 the development of a 50 keV electron multi-beam Mask Exposure Tool (eMET) was started with the aim to realize 256-thousand programmable 20 nm and 10 nm sized beams. The eMET column realization will provide important synergies for the development of projection mask-less lithography (PML2) for direct write on wafers. In order to enhance throughput a Multi-Axis-PML2 scheme is put forward with potential throughput of 5 WPH for the 16 nm hp technology node and below. Clustering such maskless tools a throughput of 50-100 WPH within a scanner floor space is envisioned. Ion multi-beam techniques may be applied for 2.5D / 3D template fabrication and resistless nanopatterning.

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Elmar Platzgummer "Maskless lithography and nanopatterning with electron and ion multibeam projection", Proc. SPIE 7637, Alternative Lithographic Technologies II, 763703 (1 April 2010); https://doi.org/10.1117/12.852226

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KEYWORDS

Semiconducting wafers

Ions

Photomasks

Lithography

Nanostructures

Critical dimension metrology

Nanofabrication

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