Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance

Lan Chen; Yong-Keng Goh; Kirsten Lawrie; Bruce Smith; Warren Montgomery; Paul A. Zimmerman; Idriss Blakey; Andrew K. Whittaker

doi:10.1117/12.846971

29 March 2010 Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance

Lan Chen, Yong-Keng Goh, Kirsten Lawrie, Bruce Smith, Warren Montgomery, Paul A. Zimmerman, Idriss Blakey, Andrew K. Whittaker

Author Affiliations +

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76390V (2010) https://doi.org/10.1117/12.846971
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

The feasibility of three polymer systems for use as non chemically amplified resists for 193 nm lithography are discussed. The three systems are polycarbonates, polyphthalaldehydes and polysulfones. In general it was found that increased absorbance resulted in higher sensitivity to 193 nm light. However, the exception to this was the polycarbonates, which were found to undergo crosslinking due to an alkene group present in the polymer backbone. Although polyphthalaldehydes were very sensitive, their absorbance values were too high to be useful in a commercial environment. Absorbing polysulfones were found to be sensitive to 193 nm light and initial patterning results have been presented.

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Lan Chen, Yong-Keng Goh, Kirsten Lawrie, Bruce Smith, Warren Montgomery, Paul A. Zimmerman, Idriss Blakey, and Andrew K. Whittaker "Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390V (29 March 2010); https://doi.org/10.1117/12.846971

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