Accelerating the dual damascene process time by new filling material

Kung-Hsun Tsao; Yu-Huan Liu; Tsz-Yuan Chen; Chih-Jung Chen; C. C. Huang; Yung-Cheng Chang; Go Noya; Nick Hsiao; Simon Chiu; Vencent Chang; Tomohide Katayama; Hisashi Motobayashi

doi:10.1117/12.855997

30 March 2010 Accelerating the dual damascene process time by new filling material

Kung-Hsun Tsao, Yu-Huan Liu, Tsz-Yuan Chen, Chih-Jung Chen, C. C. Huang, Yung-Cheng Chang, Go Noya, Nick Hsiao, Simon Chiu, Vencent Chang, Tomohide Katayama, Hisashi Motobayashi

Author Affiliations +

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76392A (2010) https://doi.org/10.1117/12.855997
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Dual damascene technique has been widely applied to IC device fabrication in copper interconnect process. For traditional via-first dual damascene application, a fill material is first employed to fill via to protect over-etching and punch-through of the bottom barrier layer during the trench-etch process. Etch-back process is then applied to remove excess overfill thickness and maintain a greater planar topography. To get better CD control, a thin organic BARC is finally coated to reduce reflectivity for trench patterning but not in this study. It is a multi-step and costly dual damascene process. In this study, a new gap-filling BARC material with good via fill and light absorption features was adopted to explore the via-first dual damascene process by skipping etch-back and BARC coating steps. The results show not only the reduction of process cycle time and cost saving but also the CP yield improvement based on data from pilot production of 0.11/0.13 μm logic device.

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Kung-Hsun Tsao, Yu-Huan Liu, Tsz-Yuan Chen, Chih-Jung Chen, C. C. Huang, Yung-Cheng Chang, Go Noya, Nick Hsiao, Simon Chiu, Vencent Chang, Tomohide Katayama, and Hisashi Motobayashi "Accelerating the dual damascene process time by new filling material", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392A (30 March 2010); https://doi.org/10.1117/12.855997

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