Is the resist sidewall after development isotropic or anisotropic? effects of resist sidewall morphology on LER reduction and transfer during etching

Vassilios Constantoudis; George Kokkoris; Evangelos Gogolides; Erwine Pargon; Mickael Martin

doi:10.1117/12.849300

25 March 2010 Is the resist sidewall after development isotropic or anisotropic? effects of resist sidewall morphology on LER reduction and transfer during etching

Vassilios Constantoudis, George Kokkoris, Evangelos Gogolides, Erwine Pargon, Mickael Martin

Author Affiliations +

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76392T (2010) https://doi.org/10.1117/12.849300
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Measurements of the sidewall morphology of commercial resist lines (3D Line Edge Roughness) after lithography and before etching by CD-AFM and SEM show that they exhibit anisotropy in the form of striations perpendicular to line direction. When this anisotropy of post-litho resist sidewalls is included in the models for trimming and pattern transfer proposed in [V. Constantoudis et al., Proc SPIE 7273, 72732J (2009)], then the models predict the beneficial role of trimming process in LER reduction during pattern transfer in agreement with experimental results. Furthermore, experimental and simulation studies show that the CD-AFM measurements of the 3D Line Width Roughness may overestimate the correlation length. Taking into account this finding in the model for trimming, we found that model predictions approach further the experimental results.

Citation Download Citation

Vassilios Constantoudis, George Kokkoris, Evangelos Gogolides, Erwine Pargon, and Mickael Martin "Is the resist sidewall after development isotropic or anisotropic? effects of resist sidewall morphology on LER reduction and transfer during etching", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392T (25 March 2010); https://doi.org/10.1117/12.849300

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available