Line-edge roughness and the ultimate limits of lithography

Chris A. Mack

doi:10.1117/12.848236

25 March 2010 Line-edge roughness and the ultimate limits of lithography

Chris A. Mack

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 763931 (2010) https://doi.org/10.1117/12.848236
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

In this paper, a stochastic modeling approach is used to predict the results of the exposure and post-exposure bake of a chemically amplified photoresist. The statistics of photon shot noise, chemical concentration, exposure, reaction-diffusion, and amplification are derived. The result, though preliminary, is a prediction of the standard deviation of the final deprotection level of polymer molecules in the resist using simple, analytical expressions. Combining this result with ongoing work to characterize the stochastics of resist development will eventually lead to a full model of the line-edge roughness of a resist feature. The current model is used to elucidate the impact of acid diffusion on line-edge roughness.

Citation Download Citation

Chris A. Mack "Line-edge roughness and the ultimate limits of lithography", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763931 (25 March 2010); https://doi.org/10.1117/12.848236

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