Particle generation during photoresist dissolution

Siddharth Chauhan; Mark Somervell; Michael Carcasi; Steven Scheer; Roger T. Bonnecaze; Chris Mack; C. Grant Willson

doi:10.1117/12.848424

25 March 2010 Particle generation during photoresist dissolution

Siddharth Chauhan, Mark Somervell, Michael Carcasi, Steven Scheer, Roger T. Bonnecaze, Chris Mack, C. Grant Willson

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 763933 (2010) https://doi.org/10.1117/12.848424
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

A lattice-type Monte Carlo based mesoscale model and simulation of the lithography process has been described previously [1]. The model includes the spin coating, post apply bake, exposure, post exposure bake and development steps. This simulation has been adapted to study the insoluble particle generation that arises from statistically improbable events. These events occur when there is a connected pathway of soluble material that envelops a volume of insoluble material due to fluctuations in the deprotection profile that occur during the post exposure bake [2]. Development erodes the insoluble material into the developer stream as an insoluble particle. This process may produce a cavity on the line edge that can be far larger than a single polymer molecule. The insoluble particles generated may coalesce in developer to form large aggregates of insoluble material that ultimately deposit on the wafer surface and the tooling. The recent modifications made in mesoscale models for the PEB and dissolution steps, which have enabled this study are briefly described. An algorithm that was used for particle detection in the current study is also discussed. The effect of the resist formulation and the different lithographic steps, namely, exposure, post exposure bake and development, on the extent of particle generation is analyzed. These simulations can be used to set process variables to minimize the extent of particle generation.

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Siddharth Chauhan, Mark Somervell, Michael Carcasi, Steven Scheer, Roger T. Bonnecaze, Chris Mack, and C. Grant Willson "Particle generation during photoresist dissolution", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763933 (25 March 2010); https://doi.org/10.1117/12.848424

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KEYWORDS

Particles

Polymers

Monte Carlo methods

Photoresist materials

Photoresist developing

Diffusion

Lithography

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