Methods for assessing empirical model parameters and calibration pattern measurements

Xin Zhou; Eldar Khaliullin; Lan Luan

doi:10.1117/12.847734

3 March 2010 Methods for assessing empirical model parameters and calibration pattern measurements

Xin Zhou, Eldar Khaliullin, Lan Luan

Proceedings Volume 7640, Optical Microlithography XXIII; 764038 (2010) https://doi.org/10.1117/12.847734
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Assessing an empirical model for ILT or OPC on a full-chip scale is a non-trivial task because the model's fit to calibration input data must be balanced against its robust prediction on wafer prints. When a model does not fit the calibration measurements well, we face the difficult choice between readjusting model parameters and re-measuring wafer CDs of calibration patterns. On the other hand, when a model does fit very well, we will still likely have the nagging suspicion that an overfitting might have occurred. Here we define a few objective and quantitative methods for model assessment. Both theoretical foundation and practical use are presented.

Citation Download Citation

Xin Zhou, Eldar Khaliullin, and Lan Luan "Methods for assessing empirical model parameters and calibration pattern measurements", Proc. SPIE 7640, Optical Microlithography XXIII, 764038 (3 March 2010); https://doi.org/10.1117/12.847734

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