Influences of process parameters of low frequency PECVD technology on intrinsic stress of silicon nitride thin film

Weizhi Li; Zhe Kang; Yun Ye; Yadong Jiang

doi:10.1117/12.867778

22 October 2010 Influences of process parameters of low frequency PECVD technology on intrinsic stress of silicon nitride thin film

Weizhi Li, Zhe Kang, Yun Ye, Yadong Jiang

Author Affiliations +

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 765824 (2010) https://doi.org/10.1117/12.867778
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Silicon nitride (SiNx) thin films were deposited by low frequency (LF) plasma enhanced chemical vapor deposition (PECVD) technology. By systematic variation of the process parameters, e.g. reactive gas flow rate, LF power, chamber gas pressure and substrate temperature. Influences of above parameters on the intrinsic stress of SiN_x films were studied and analyzed by combining with the measured refractive index (RI), density, infrared spectra results of deposited SiN_x films. The results showed that intrinsic stress of SiN_x film was roughly proportional to film density, which was inversely proportional to hydrogen content in the SiN_x film. Substrate temperature during deposition was the most important factor affecting hydrogen content in deposited film and, accordingly, the density and intrinsic stress of SiN_x film.

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Weizhi Li, Zhe Kang, Yun Ye, and Yadong Jiang "Influences of process parameters of low frequency PECVD technology on intrinsic stress of silicon nitride thin film", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765824 (22 October 2010); https://doi.org/10.1117/12.867778

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