Multi-shaped e-beam technology for mask writing

Juergen Gramss; Arnd Stoeckel; Ulf Weidenmueller; Hans-Joachim Doering; Martin Bloecker; Martin Sczyrba; Michael Finken; Timo Wandel; Detlef Melzer

doi:10.1117/12.865708

24 September 2010 Multi-shaped e-beam technology for mask writing

Juergen Gramss, Arnd Stoeckel, Ulf Weidenmueller, Hans-Joachim Doering, Martin Bloecker, Martin Sczyrba, Michael Finken, Timo Wandel, Detlef Melzer

Author Affiliations +

Proceedings Volume 7823, Photomask Technology 2010; 782309 (2010) https://doi.org/10.1117/12.865708
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

Photomask lithography for the 22nm technology node and beyond requires new approaches in equipment as well as mask design. Multi Shaped Beam technology (MSB) for photomask patterning using a matrix of small beamlets instead of just one shaped beam, is a very effective and evolutionary enhancement of the well established Variable Shaped Beam (VSB) technique. Its technical feasibility has been successfully demonstrated ^[2]. One advantage of MSB is the productivity gain over VSB with decreasing critical dimensions (CDs) and increasing levels of optical proximity correction (OPC) or for inverse lithography technology (ILT) and source mask optimization (SMO) solutions. This makes MSB an attractive alternative to VSB for photomask lithography at future technology nodes. The present paper describes in detail the working principles and advantages of MSB over VSB for photomask applications. MSB integrates the electron optical column, x/y stage and data path into an operational electron beam lithography system. Multi e-beam mask writer specific requirements concerning the computational lithography and their implementation are outlined here. Data preparation of aggressive OPC layouts, shot count reductions over VSB, data path architecture, write time simulation and several aspects of the exposure process sequence are also discussed. Analysis results of both the MSB processing and the write time of full 32nm and 22nm node critical layer mask layouts are presented as an example.

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Juergen Gramss, Arnd Stoeckel, Ulf Weidenmueller, Hans-Joachim Doering, Martin Bloecker, Martin Sczyrba, Michael Finken, Timo Wandel, and Detlef Melzer "Multi-shaped e-beam technology for mask writing", Proc. SPIE 7823, Photomask Technology 2010, 782309 (24 September 2010); https://doi.org/10.1117/12.865708

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